摘要：本文介紹一種新研制的，具有優(yōu)化高溫工作能力的1700V IGBT和二極管芯片組。由于引入新的終端概念和硅設計，改進了ABB公司的最新一代平面柵1700V IGBT（SPT+）性能。通過局部質子壽命控制層的引入，150℃下二極管的漏電流已顯著減小，同時保留了與先前SPT（軟穿通）二極管工藝平臺相同的電學特性。上述所有特征有望使額定值在3600A 、工作在-40℃到150℃結溫變化范圍內(nèi)的1700V 模塊研制成為可能。這種模塊將具有低損耗和高安全工作區(qū)（SOA）。高于175℃工作溫度方向的拓展，將在以后介紹。 敘詞：芯片組 高溫 低損耗 高安全工作區(qū) Abstract：This paper introduces a new 1700V SPT+IGBT and Diode Chip Set with High Temperature Operation Capability. Thanks to the introduction of new terminal concept and silicon design, the performance of the new-generation panar cascade by ABB company has been improved. By the introduction of partial proton duration control layer, the leakage current of diode under 150 has been lessened, while in the meantime, the elctric features of the previous SPT diode technological platform still remain. All the features make it possible for the research of 1700V module, which has a temperature rage of -40 and 150 and a rating of 3600A. The module will enjoy low loss and high SOA. The extension toward the function temperature high than 175 will be introduced in the future. Keyword：Chip set, High temperature, Loss Loss, High SOA